# Project 9999 — Congressional Adds

**Program element:** 0603573N — Advanced Surface Machinery Sys  
**Project:** 9999  
**Component:** U.S. Navy  
**Appropriation:** 1319 — RDT&E, Navy  
**Budget Activity:** 4 — Advanced Component Development & Prototypes  
**Vintage:** President's Budget PB2027  
**Canonical URL:** https://hitchintel.com/programs/0603573N/9999  
**Parent:** https://hitchintel.com/programs/0603573N

## Summary

Project 9999 — Congressional Adds requests $0.0M in FY2027, 0.0% of the $270.0M requested for program element 0603573N, down 100% on FY2026.

## Funding profile

| Fiscal Year | Estimate Type | Amount ($M) |
|---|---|---|
| FY2025 | Actual | 4.8 |
| FY2026 | Enacted | 49.2 |
| FY2027 | Request | 0.0 |
| FY2028 | Outyear | 0.0 |
| FY2029 | Outyear | 0.0 |
| FY2030 | Outyear | 0.0 |
| FY2031 | Outyear | 0.0 |

> Estimate types are not summed. This project is one leaf of PE 0603573N; the PE total is the sum of its projects, never added to them.

## What project 9999 buys

C332 Silicon Carbide Power Electronics & System Integration: The proposed effort is to develop a prototype demonstrator of a SiC-enabled hybrid modular multilevel converter (HMMC-SiC) that is targeted for high power and medium voltage power system applications in particular for ship propulsion and ship integrated power systems. The development will focus on generating key sub-assemblies such as the full-bridge submodules (SMs) with SiC MOSFETs (SMs-SiC) and SMs with silicon IGBTs (SMs-Si) with a focus on SMs-SiC, and the medium voltage IGBT semiconductor switches (MVSS) assemblies. These building block assemblies (SMs and MVSS) include the semiconductors and their peripherals such as gate drivers, power supplies, protection, capacitors etc. Further we will integrate these elements into a working and demonstratable system in commercial or custom packaging with dedicated hardware such as the arm inductors, bus work, controllers etc. This will mature and elevate the technology readiness level (TRL) propose this converter topology for near- and mid-term US Navy ship propulsion and power system applications. CA21 Silicon Carbide Semiconductors: The focus of this project is the design, development, and testing of silicon carbide (SiC) semiconductor devices. The primary objectives are to achieve a reduction in the physical size of the components and an increase in their switching frequency capabilities. This involves leveraging the superior material properties of SiC, such as its higher breakdown voltage and thermal conductivity, which allow for more compact and efficient power electronic systems. The faster switching speeds of SiC transistors lead to smaller passive components, further reducing the total size of the drive/converter. The design and testing process will validate the performance and reliability of these next-generation SiC devices for high-power applications. CA22 Integrated Silicon Carbine Bi-Directional Power Converter: This advanced technology provides wide-bandgap properties which enable power conversion systems with higher power density, allowing for reduced size and weight while delivering higher efficiency.

**R-3 lines of work:** Product Development.

## What is NOT on this page

Congressional marks, the R-2 mission description and acquisition strategy, the industry vs government split of the whole request, and related program elements are recorded at **program-element** grain — an NDAA mark lands on a PE, never on a project. They are at https://hitchintel.com/programs/0603573N.

## Source & machine access

- **Source:** FY2027 Department of the Navy RDT&E Budget Justification, Exhibits R-2/R-2A/R-3, PE 0603573N project 9999 (PB PB2027).
- **MCP:** `mcp.hitchintel.com` — `budget_get_program_element(pe="0603573N")`.

*HitchAI is an independent intelligence service, not affiliated with the U.S. Department of Defense. Budget figures are requests/estimates, not obligations.*