# Access to Radiation Hardened-, RF-, and Opto-Electronic Development

**R-2A activity** of project 911 — DOW Unique Needs RADHARD  
**Program element:** 0604294D8Z — Trusted and Assured Microelectronics  
**Component:** Defense-Wide · **Budget Activity:** 4  
**Vintage:** President's Budget PB2027  
**Canonical URL:** https://hitchintel.com/programs/0604294D8Z/911/a0  
**Parent:** https://hitchintel.com/programs/0604294D8Z/911

## Summary

This activity requests $108.5M in FY2027, 100% of project 911, down 42% on FY2026. The R-2A exhibit describes it across FY2025–FY2027, including what the FY2027 money is planned to buy.

## What the FY2027 request buys

**FY2027 planned work.** • Fabrication, test, and evaluation of radiation hardened devices and GaN materials. • Demonstrate device performance for transition. • Qualification of radiation hardened foundry processes.

**FY2026 to FY2027 change.** The decrease of $78.840 million between FY 2026 and FY 2027 is due to priority realignment for DoW critical technologies.

## Before the request year

**FY2026 plans — current year.** • Development of radiation hardened by design (RHBD) techniques in state-of-the-art (SOTA) technologies with validated radiation aware process design kits (PDKs) and radiation hardened cell libraries. • Transition developed radiation hardened technologies into space and strategic programs. • Characterize, develop, and demonstrate space and strategic radiation hard microelectronics technology in support of DoW programs. • Develop State-of-the-art RF GaN materials and devices. Develop co-packaged optical chiplets and multi-chip packages offering high-bandwidth data transfer capabilities. Develop high-voltage Power SiC electronics and high-temperature peripherals for unique DoW applications. • Rapid prototyping of tactical transceivers and processing systems leveraging GaN, for applications in communications, electronic warfare, and radar.

**FY2025 accomplishments.** Planned activities are as follows: • Continue to mature multiple MRL-7 state-of-the-art RF GaN foundries offering open access to millimeter wave device design and advanced interconnect services. • Continue to mature MRL-6 multiple co-packaged optical chiplets and multi-chip packages offering high-bandwidth data transfer capabilities. • Continue to mature manufacturing readiness level (MRL)-6 advanced semiconductor material production and baseline for insertion into multiple millimeter wave foundries. • Continue workforce development program for radio frequency (RF), power, and photonics. • Continue development of next generation RF Gallium Nitride (GaN) power technologies to increase RF power efficiency and dramatically improve thermal efficiency and management, decreasing the power load on DoD platforms. • Continue development of next generation RF GaN prototypes with improved performance at an affordable cost for drop in Line Replaceable Units (LRUs) in existing systems potentially without major architectural and structural redesign. Leverage commercial developments in next generation RF GaN power technologies to adapt for DoD applications. • Continue development of radiation hardened by design (RHBD) techniques in state-of-the-art (SOTA) technologies with validated radiation aware process design kits (PDKs) and radiation hardened cell libraries • Transition developed radiation hardened technologies into space and strategic programs. Initiate effort to transition emerging memory architectures for artificial intelligence (AI) applications, benefiting existing Programs of Record and emerging DoD electronics systems. • Develop emerging memory architectures for future DoD edge applications for AI, with more severe power constraints as AI models grow in size and the need for rapid response means always-on is required. • Continued characterization, development, and demonstration of space and strategic radiation hard microelectronics technology in support of DoD modernization efforts. These radiation hardened investments fund projects in the following rad hard technology areas: radiation hardened by process (RHBP) RHBD to support space and strategic application-specific integrated circuit (ASIC) requirements, standalone radiation hardened components for cross-service common parts needs, as well as lab modernization in support independent validation and verification of rad hard technology.

## Funding

| Fiscal Year | Estimate Type | Amount ($M) |
|---|---|---|
| FY2025 | Actual | 125.0 |
| FY2026 | Enacted | 187.3 |
| FY2027 | Request | 108.5 |

> Prior, current and budget year only — an R-2A activity carries no five-year plan. It sums exactly into its project in the request year and not necessarily in any other.

## Source & machine access

- **Source:** FY2027 Office of the Secretary of Defense RDT&E Budget Justification, Exhibit R-2A, PE 0604294D8Z project 911 (PB PB2027). Narrative is the government's own text.
- **No marks, no contractors at this grain** — congressional marks land on the program element and R-3 performers on the project.
- **MCP:** `mcp.hitchintel.com` — `budget_get_activity`.

*HitchAI is an independent intelligence service, not affiliated with the U.S. Department of Defense. Budget figures are requests/estimates, not obligations.*