# Access to Radiation Hardened-, RF-, and Opto-Electronic - Demonstration

**R-2A activity** of project 905 — DOW Unique NDS RADHARD - Demonstration  
**Program element:** 0605294D8Z — Trusted and Assured Microelectronics  
**Component:** Defense-Wide · **Budget Activity:** 5  
**Vintage:** President's Budget PB2027  
**Canonical URL:** https://hitchintel.com/programs/0605294D8Z/905/a0  
**Parent:** https://hitchintel.com/programs/0605294D8Z/905

## Summary

This activity requests $23.4M in FY2027, 100% of project 905, down 4.0% on FY2026. The R-2A exhibit describes it across FY2025–FY2027, including what the FY2027 money is planned to buy.

## What the FY2027 request buys

**FY2027 planned work.** • Demonstrate developed technologies for tactical datalink applications, including developments in optical communications, GaN technology, and multi-chip packaging advancements to improve the data rate and link range in representative environments, and accelerate transition to the warfighter. • Demonstrate and validate the manufacturing readiness and performance of radiation hardened devices and materials, antenna and radio units, and optical communications devices for electromagnetic spectrum maneuverability.

**FY2026 to FY2027 change.** The decrease of $0.968 million between FY 2026 and FY 2027 is due to priority realignment for DoW critical technologies.

## Before the request year

**FY2026 plans — current year.** • Demonstrate SOTP and SOTA technologies utilizing RHBP and RHBD activities in support of DoW programs with radiation hardened requirements. • Transition developed RH technologies into space and strategic programs. Increase capacity for RHBD technologies to support additional DoW programs. • Demonstrate RF Gallium Nitride (GaN), co-packaged optics (CPO), power Silicon Carbide (SiC), and multi-chip packages (MCP) to enable compact transceivers, artificial intelligence training for edge compute, and other critical warfighting and national security applications. • Demonstrate high-voltage power SiC electronics and high-temperature peripherals for unique DoW applications. • Demonstrate next generation beyond complementary metal oxide semiconductor (CMOS) technologies that advance capabilities of state-of-the-art for tactical transceivers and processing systems, for communications, electronic warfare, and radar applications.

**FY2025 accomplishments.** Planned activities are as follows: • Continue to demonstrate SOTP and SOTA technologies utilizing RHBP and RHBD activities in support of DoD modernization programs with radiation hardened requirements. • Transition developed RH technologies into space and strategic programs. • Increase capacity for RHBD technologies to support additional DoD programs • Continue to mature multiple MRL-7 state-of-the-art RF GaN foundries offering open access to millimeter wave device design and advanced interconnect services • Continue to mature manufacturing readiness level (MRL)-6 multiple co-packaged optical chiplets and multi-chip packages offering high-bandwidth data transfer capabilities. • Continue to mature MRL-6 advanced semiconductor material production and baseline for insertion into multiple millimeter wave foundries. • Continue workforce development program for radio frequency (RF), power, and photonics. • Continue demonstration of next generation RF Gallium Nitride (GaN) power technologies to increase RF power efficiency and dramatically improve thermal efficiency and management, decreasing the power load on DoD platforms. • Continue demonstration of next generation RF GaN prototypes with improved performance at an affordable cost for drop in Line Replaceable Units (LRUs) in existing systems potentially without major architectural and structural redesign. Leverage commercial developments in next generation RF GaN power technologies to adapt for DoD applications.

## Funding

| Fiscal Year | Estimate Type | Amount ($M) |
|---|---|---|
| FY2025 | Actual | 46.7 |
| FY2026 | Enacted | 24.3 |
| FY2027 | Request | 23.4 |

> Prior, current and budget year only — an R-2A activity carries no five-year plan. It sums exactly into its project in the request year and not necessarily in any other.

## Source & machine access

- **Source:** FY2027 Office of the Secretary of Defense RDT&E Budget Justification, Exhibit R-2A, PE 0605294D8Z project 905 (PB PB2027). Narrative is the government's own text.
- **No marks, no contractors at this grain** — congressional marks land on the program element and R-3 performers on the project.
- **MCP:** `mcp.hitchintel.com` — `budget_get_activity`.

*HitchAI is an independent intelligence service, not affiliated with the U.S. Department of Defense. Budget figures are requests/estimates, not obligations.*