R-2A Activity · President's Budget PB2027

Access to Radiation Hardened-, RF-, and Opto-Electronic - Demonstration

FY2027 Request
$23.4M
▼ 4.0% vs FY2026
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This activity requests $23.4M in FY2027, 100% of project 905, down 4.0% on FY2026. The R-2A exhibit describes it across FY2025–FY2027, including what the FY2027 money is planned to buy.

FY2027 Request
$23.4M
▼ 4.0% vs FY2026
FY2026 Enacted
$24.3M
▼ 48% vs FY2025
FY2025 Actual
$46.7M
Prior year
Planned work

What the FY2027 request buys

Verbatim from the R-2A exhibit for project 905 of PE 0605294D8Z. This is the budget justification's own description of work that has not happened yet — the one thing no other level of the budget carries.

FY2027 planned work

• Demonstrate developed technologies for tactical datalink applications, including developments in optical communications, GaN technology, and multi-chip packaging advancements to improve the data rate and link range in representative environments, and accelerate transition to the warfighter. • Demonstrate and validate the manufacturing readiness and performance of radiation hardened devices and materials, antenna and radio units, and optical communications devices for electromagnetic spectrum maneuverability.

FY2026 to FY2027 change

The decrease of $0.968 million between FY 2026 and FY 2027 is due to priority realignment for DoW critical technologies.

Before the request year

FY2025–FY2026: what came before

Prior-year accomplishments and current-year plans from the same exhibit. Context for the FY2027 plan, not a series — an activity partitions its project exactly in the request year, but can under-cover it in earlier years.

FY2026 plans — current year

• Demonstrate SOTP and SOTA technologies utilizing RHBP and RHBD activities in support of DoW programs with radiation hardened requirements. • Transition developed RH technologies into space and strategic programs. Increase capacity for RHBD technologies to support additional DoW programs. • Demonstrate RF Gallium Nitride (GaN), co-packaged optics (CPO), power Silicon Carbide (SiC), and multi-chip packages (MCP) to enable compact transceivers, artificial intelligence training for edge compute, and other critical warfighting and national security applications. • Demonstrate high-voltage power SiC electronics and high-temperature peripherals for unique DoW applications. • Demonstrate next generation beyond complementary metal oxide semiconductor (CMOS) technologies that advance capabilities of state-of-the-art for tactical transceivers and processing systems, for communications, electronic warfare, and radar applications.

FY2025 accomplishments

Planned activities are as follows: • Continue to demonstrate SOTP and SOTA technologies utilizing RHBP and RHBD activities in support of DoD modernization programs with radiation hardened requirements. • Transition developed RH technologies into space and strategic programs. • Increase capacity for RHBD technologies to support additional DoD programs • Continue to mature multiple MRL-7 state-of-the-art RF GaN foundries offering open access to millimeter wave device design and advanced interconnect services • Continue to mature manufacturing readiness level (MRL)-6 multiple co-packaged optical chiplets and multi-chip packages offering high-bandwidth data transfer capabilities. • Continue to mature MRL-6 advanced semiconductor material production and baseline for insertion into multiple millimeter wave foundries. • Continue workforce development program for radio frequency (RF), power, and photonics. • Continue demonstration of next generation RF Gallium Nitride (GaN) power technologies to increase RF power efficiency and dramatically improve thermal efficiency and management, decreasing the power load on DoD platforms. • Continue demonstration of next generation RF GaN prototypes with improved performance at an affordable cost for drop in Line Replaceable Units (LRUs) in existing systems potentially without major architectural and structural redesign. Leverage commercial developments in next generation RF GaN power technologies to adapt for DoD applications.

Money

Three years, and no five-year plan

An R-2A activity publishes the prior year, the current year and the budget year. The FYDP outyears exist at project and program-element level and are deliberately absent here rather than inferred. Estimate types are colored and never summed into one figure.

25046.7FY25ACTUAL24.3FY26ENACTED23.4FY27REQUEST
Actual Enacted Request
Fiscal YearEstimate TypeAmount ($M)
FY2025Actual46.7
FY2026Enacted24.3
FY2027Request23.4

This activity is 100% of project 905's FY2027 request and 46% of PE 0605294D8Z's. In the request year the activities under a project sum to it exactly; in the current year they under-cover it in about 9% of cases, so an activity's delta can legitimately exceed its parent's and the two must not be compared row to row.

Where this sits

1 activity in project 905

Every R-2A line of this project, largest FY2027 request first. Linked where the activity has enough of its own narrative to carry a page; the rest are shown in full on the project page.

Access to Radiation Hardened-, RF-, and Opto-Electronic - Demonstration — this activity$23.4M ▼ 4%
Source
FY2027 Office of the Secretary of Defense RDT&E Budget Justification · Exhibit R-2A · PE 0605294D8Z, project 905 (President's Budget PB2027). Congressional marks are recorded on the program element, never on an activity.
Machine access
Markdown twin /programs/0605294D8Z/905/a0.md · MCP mcp.hitchintel.combudget_get_activity